Titanium oxide thin films synthesis by pulsed – DC magnetron sputtering

Titanium oxide thin films (1–4 μm) were deposited on the porous Hastelloy-X substrates using the pulsed – DC magnetron sputtering technique and characterized by X–ray diffraction (XRD) and scanning electron microscopy (SEM) methods. Firstly, the films were deposited at different distances between the magnetron and the substrate, as magnetron current and pressure in the deposition chamber were constant. The distance between the magnetron and the substrate was changed from 3 cm to 7 cm, and the deposition rate varied between 10.1 nm/min to 6.0 nm/min. Secondly, pressure influence for the deposition rate was investigated. The deposition rate decreased nearly 15% with the decrease of oxygen pressure from 1.3 to 6.0 Pa. Finally, the influence of the bias (applied to the substrate for the increase of deposition rate) on thin films phase and microstructure was investigated.The experimental results showed that formation of pure titanium oxide thin films was observed in all experimental cases. Only crystallite sizes and orientation were changed. The results showed that there is a possibility to change porosity and uniformity of the growing film by changing oxygen partial pressure during deposition or bias application to the substrate. The existence of columnar boundaries and nanocrystalline structure in the films was observed.