Formation of nanotubes in Cz Si wafers using He+ implantation and subsequent O+- or N+-plasma treatment

1D defects (nanotubes) normal to the sample surface with defect's length equal to the projected range of the implanted ions were formed in the Cz Si wafers following He+ implantation with subsequent vacuum annealing and plasma treatment. The surfaces of wafers contained a small density of defects.