کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691538 | 1011319 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
SEM and SIMS study of the buried SixNy layer formed in silicon
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Standard 20 Ωcm boron doped Cz Si wafers were subjected to 100 keV hydrogen ion implantation at room temperature to fluences of 1 × 1016 or 4 × 1016 at/cm2. Subsequently, nitrogen was incorporated in silicon from a DC plasma source at a temperature of 300 °C. Finally, all samples were annealed at 700 °C for 2 h in vacuum. Structural properties of samples were studied by SIMS and SEM. The SEM study was carried out both in the secondary electrons (SE) and the Surface-Electron-Beam-Induced-Voltage (SEBIV) modes. The experiments have demonstrated that incorporated from plasma nitrogen atoms were accumulated in the buried damage layer and the formed nitrogen-containing layer has an island-like structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 83, Supplement 1, 1 May 2009, Pages S107–S110
Journal: Vacuum - Volume 83, Supplement 1, 1 May 2009, Pages S107–S110
نویسندگان
A.M. Saad, A.V. Frantskevich, A.K. Fedotov, E.I. Rau, A.V. Mazanik, N.V. Frantskevich, P. Węgierek, T. Kołtunowicz, P. Żukowski,