Depth distributions of elements in monoatomic and compound coatings deposited onto copper and silicon by IBAD

One-component and multicomponent compound coatings were deposited on substrates of copper and silicon by the method of ion-beam assisted deposition. Atomic species sputtered from the inner surface of hollow truncated cones of different compositions were deposited on these substrates. AES and RBS were used to determine depth distributions of deposited elements. The depth of equal atomic concentrations of deposited and matrix has been considered as a depth marker of produced coatings. It was shown that the layer thickness does not depend on the substrate (copper and silicon in our study) and for a given coating composition is a linear function of the fluence. A few possible mechanisms of radiation-enhanced diffusion are discussed to explain observed phenomena.