Study of GaAs and GaN based heterostructure surfaces and interfaces using ion beams and other complementary techniques

GaAs and GaN semiconductors and their heterostructures have been of interest for a few years now, because of their promising applications. Ion beams and other complimentary techniques are used for characterization of the surface and interfaces, to understand the novel properties of these materials. In this work we have reported the use of complimentary techniques like high-resolution X-ray diffraction (HRXRD), Rutherford backscattering/channelling (RBS/C), atomic force microscopy (AFM), and transmission electron microscopy (TEM) for characterization of these materials. We have studied InGaAs/GaAs heterostructures of various thicknesses by RBS/C, HRXRD, AFM, and TEM before and after irradiation. Bulk epitaxial layers of GaN grown on sapphire with and without AlN cap layer were characterized by HRXRD and AFM while the AlGaN/GaN heterostructures were characterized by RBS/C. The results are analyzed by taking account of the information extracted from these complementary techniques.