Synthesis of nitrogen-rich carbon nitride thin films via magnetic field-assisted inductively coupled plasma sputtering

Carbon nitride (CNx) thin films were synthesized by magnetic field-assisted inductively coupled plasma (ICP) sputtering. The electron density, electron temperature and optical emission intensity of the plasma state were significantly changed by varying the external magnetic field applied. The CNx thin film with the highest nitrogen content (N/C=1.16) was obtained when the electron density was at its highest and the electron temperature at its lowest. Additionally, the optical emission from atomic nitrogen was the strongest under the same condition.