γ-Irradiation-induced changes at the electrical characteristics of Sn/p-Si Schottky contacts

We studied electrical parameters of Sn/p-Si Schottky barrier diodes (SBDs) by using in situ current-voltage (I-V) and capacitance-voltage (C-V) measurements under γ-irradiation at room temperature. The devices were held under zero bias during γ-irradiation with dose rate 0.25 kGy/h, and the total dose range was 0-45 kGy. Irradiation results indicated that these devices may have applications as radiation sensors in order to detect the low-energy γ radiation.