کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691806 | 1011337 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of crystalline YbVO4 thin-film optical waveguides by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Epitaxial YbVO4 films have been grown on sapphire and Si/SiO2 substrates by pulsed laser deposition. Films were grown over a range of temperatures from 600 to 700 °C in the presence of an oxygen pressure between 2 and 20 Pa. The films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution scanning electron microscopy (HRSEM), and dark-mode prism coupling measurements. YbVO4 films show epitaxial growth and display one main axis orientation of (2 0 0). The degree of crystal orientation increases with increasing depositing temperature and oxygen pressure up to 700 °C and 20 Pa, respectively. AFM and HRSEM measurements show that the prepared films are dense and homogeneous and three-dimensional-island growth mechanism is confirmed. According to prism coupling measurements, sharp dip is observed for both transverse-electric (TE) and transverse-magnetic (TM) mode, which means that the light could be well confined in the prepared film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 5, 8 January 2008, Pages 463-467
Journal: Vacuum - Volume 82, Issue 5, 8 January 2008, Pages 463-467
نویسندگان
Hongxia Li, Xin Wu, Renguo Song, Jiyang Wang, Huaijin Zhang,