کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1691849 1011343 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Double effects of atomic hydrogen anneal on the microstructure of hydrogenated amorphous silicon films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Double effects of atomic hydrogen anneal on the microstructure of hydrogenated amorphous silicon films
چکیده انگلیسی

Hydrogenated amorphous silicon (a-Si:H) films have been deposited with pure silane and then annealed with atomic hydrogen at lower temperature (Ts=170 °C) in a novel, hot wire assisted microwave electron cyclotron resonant chemical vapor deposition system (HW-MWECR-CVD). The experimental results showed that the total hydrogen concentration (CH) in the film decreased with H2 flux increase in the atomic hydrogen anneal (AHA) step, but it does not obviously change, keeping at about 3% when H2 flux increased to a higher value. This is due to double effects of AHA, the crystallization effect at lower substrate temperature and the rehydrogenation effect in low hydrogen concentration films. Furthermore, it was proposed that with increasing R  (R=1/{Fhydrogen/(Fsilane+Fhydrogen)}(R=1/{Fhydrogen/(Fsilane+Fhydrogen)}, in which Fsilane is the silane gas flux in first film synthesis stage and Fhydrogen is the hydrogen gas flux during the annealing step, respectively.), polyhydrides such as SiHx (x=2 or 3) turn into monohydrides SiH, which results in reducing the network defects, improving the film microstructure and decreasing the optical band gap from 1.644 to 1.557 eV.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 82, Issue 1, 12 September 2007, Pages 105–108
نویسندگان
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