کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691865 | 1011348 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of hot wire on the formation of microcrystalline silicon in MWECR-CVD system
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The high-crystallinity and low-defect-density microcrystalline silicon films (μc-Si:H) was prepared by using a new hot-wire-assisted microwave electron cyclotron resonance-chemical vapor deposition (HWAMWECR-CVD) system. In this system the hot wire plays an important role in suppressing the growth of a-Si:H in favor of μc-Si:H, thus improving the physical properties. The experimental results show that the μc-Si:H film prepared by using this new system, the crystalline volume fraction is increased from 16.4% to 63.2%, the photoconductivity is increased by two orders of magnitude, the optical band gap is decreased to 1.59 eV, and the light-induced degradation keeps almost constant compared to that prepared by conventional system.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 80, Issue 5, 26 January 2006, Pages 421-425
Journal: Vacuum - Volume 80, Issue 5, 26 January 2006, Pages 421-425
نویسندگان
Zhu Xiu-Hong, Chen Guang-Hua, Ding Yi, Ma Zhan-Jie, Liu Guo-Han, Zhang Wen-Li, He Bin, Gao Zhi-Hua, Li Zhi-Zhong,