کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
176811 | 458956 | 2012 | 8 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Devices performance tuned by molecular film-forming properties and electron trap for WORM memory application Devices performance tuned by molecular film-forming properties and electron trap for WORM memory application](/preview/png/176811.png)
Small molecules with different film-forming properties and electron traps were synthesized and characterized in the meantime. An electrical memory device with the indium-tin-oxide (ITO)/Small-Molecule/Al sandwich structure was fabricated and its electrical performance was investigated. WORM storage devices with different threshold voltages were obtained, some of which present “ternary” property. The relationship between turn-on voltage and the energy barrier between active materials and electrodes was revealed by the cyclic voltammetry measurement. The molecular film-forming properties and electron traps are responsible for device performances collectively, which could be elucidated unambiguously from UV–vis absorption spectra and X-ray diffraction patterns.
► Some compounds were synthesized and sandwiched devices based on them were fabricated.
► All the devices show WORM storage characteristics with different threshold voltages.
► The cyclic voltammetry curve explained the different devices’ turn-on voltage.
► UV–vis and XRD spectra explained the device’s conductance switching mechanism.
Journal: Dyes and Pigments - Volume 95, Issue 2, November 2012, Pages 365–372