Keywords: دستگاه حافظه; Dead leaves; Organic; Flexible; Resistive switching; Memory device;
مقالات ISI دستگاه حافظه (ترجمه نشده)
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Keywords: دستگاه حافظه; Swift heavy ions; Ion flux; Single event effect; Memory device;
Electron-transport polymeric gold nanoparticles memory device, artificial synapse for neuromorphic applications
Keywords: دستگاه حافظه; Organic field effect transistor; Gold nanoparticles; Synapse; Electron-transport organic semiconductor; Memory device; Short term plasticity;
Keywords: دستگاه حافظه; Memory device; Resistive switching; RRAM; Nanogap junction
Keywords: دستگاه حافظه; Memory device; Electrical bistability; Negative differential resistance; Conduction mechanism
Keywords: دستگاه حافظه; Memory device; Write-once-read-many-times; Planarity; Spacial distortion; Charge trap; Benzoquinoline
Keywords: دستگاه حافظه; Memory device; Resistive switch; Gold nanoparticle; Charge transport; Coulomb blockade; Poole–Frenkel emission
Keywords: دستگاه حافظه; Micro-electro-mechanical resonator; Counter; Memory device; Switching control; Nonlinear; Coupled system;
Keywords: دستگاه حافظه; Polyimide; Memory device; Non-volatile memory; Twisted conformation;
Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device
Keywords: دستگاه حافظه; g-C3N4 powder; Voltage window; Resistive switching; Nonvolatile; Memory device;
Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device
Keywords: دستگاه حافظه; Resistive switching; Anodic oxidation; Amorphous TiO2; Conductive filaments; Memory device;
A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device
Keywords: دستگاه حافظه; Cu(In1-xGax)Se2 (CIGS); Al doped ZnO (AZO); Resistance ratio change; Memory device; Resistive switching;
A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate
Keywords: دستگاه حافظه; ZnO film; PET substrate; Flexible; Nonvolatile; Memory device;
Dopant dependent electrical switching characteristics of a CdSe- Poly(vinyl-pyrrolidone) nanocomposite
Keywords: دستگاه حافظه; Electrical switching; Memory device; Polymer nanocomposite; Doping;
Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices
Keywords: دستگاه حافظه; Cu ions; Memory device; Conductive filaments; Resistive switching; ZnFe2O4;
Changing the memory behaviors from volatile to nonvolatile via end-capping of hyperbranched polyimides with polycyclic arenes
Keywords: دستگاه حافظه; Hyperbranched polyimide; Polycyclic arenes; Endcapping; Charge transfer; Memory device;
Anthraquinone-biimidazole based ruthenium(II) complexes as selective multichannel anion sensors and multi-readout molecular logic gates and memory devices: Combined experimental and DFT/TD-DFT study
Keywords: دستگاه حافظه; Ruthenium; Anthraquinone-biimidazole; Anion sensing; Logic gates; Memory device; DFT and TD-DFT;
Smart ruthenium and osmium complexes mimic the complicated functions of traffic signal and memory device
Keywords: دستگاه حافظه; Ruthenium; Osmium; Pyrene-biimidazole; Logic gates; Traffic signal; Memory device;
Effects of 60Co γ-ray irradiation on microstructure and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films
Keywords: دستگاه حافظه; 60Co γ-ray irradiation; Bismuth compounds; Ferroelectric property; Memory device;
An optoelectronic resistive switching memory behavior of Ag/α-SnWO4/FTO device
Keywords: دستگاه حافظه; Resistive switching; Memory device; Optoelectronic; Memristor; RRAM
Improvement of reliability of polymer nanocomposite based transparent memory device by oxygen vacancy rich ZnO nanorods
Keywords: دستگاه حافظه; Memory device; Organic; Nanoparticles; Electrical bistabilities
Photo-electron double regulated resistive switching memory behaviors of Ag/CuWO4/FTO device
Keywords: دستگاه حافظه; CuWO4; Resistive switching; Photo-electron double controlled; Memory device
Two quinoxaline derivatives designed from isomer chemistry for nonvolatile ternary memory device applications
Keywords: دستگاه حافظه; Quinoxaline; Memory device; Ternary; Write once read many times; Horizontal conjugation; Cyano group
Insitu CCVD grown bilayer graphene transistors for applications in nanoelectronics
Keywords: دستگاه حافظه; Bilayer graphene; Transfer-free grown; Memory device;
Robust ZnO nanoparticle embedded memory device using vancomycin conjugate and its biorecognition for electrical charging node
Keywords: دستگاه حافظه; ZnO nanoparticles; Vancomycin; Self-assembly monolayer; Memory device; Biorecognition; Bioelectronics
Electrical switching and conduction mechanisms of nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polyvinylpyrrolidone
Keywords: دستگاه حافظه; PVP; ZnO; WORM; Nanoparticle; Memory device; Conduction mechanism;
Electrical bistability of tris-(8-hydroxyquinoline) aluminum (Alq3)/ZnSe organic-inorganic bistable device
Keywords: دستگاه حافظه; Organic-inorganic nanodevice; Memory device; Conduction mechanism; Bistable device; Memory characteristics
Electrical bistable properties of copper phthalocyanine at different deposition rates
Keywords: دستگاه حافظه; CuPc; Organic memory; Memory device; Conduction mechanism
Devices performance tuned by molecular film-forming properties and electron trap for WORM memory application
Keywords: دستگاه حافظه; Memory device; Azonaphthalene; Film-forming properties; WORM; Ternary; Electron trap
Fixed negative interface charges compromise organic ferroelectric field-effect transistors
Keywords: دستگاه حافظه; Organic TFT; Memory device; Ferroelectric polymer; Organic FeFET; Ferroelectric polarization; Trapped charges;
Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior
Keywords: دستگاه حافظه; Memory device; Resistive switching; RRAM
Noise-assisted multibit storage device
Keywords: دستگاه حافظه; Noise-assisted information storage; Memory device;
Critical role of top interface layer on the bipolar resistive switching of Al/PEDOT:PSS/Al memory device
Keywords: دستگاه حافظه; PEDOT:PSS; TEM; In-situ XPS; Resistive switching; Memory device
Memory devices based on small organic molecules donor-acceptor system
Keywords: دستگاه حافظه; Memory device; Organic molecules; Polyvinyl acetate; Switching mechanism;
Hysteresis-type current–voltage characteristics in Au/eumelanin/ITO/glass structure: Towards melanin based memory devices
Keywords: دستگاه حافظه; Eumelanin layer; Hysteresis effect; Memory device
Carrier transport mechanism in aluminum nanoparticle embedded AlQ3 structures for organic bistable memory devices
Keywords: دستگاه حافظه; 72.80.Le; 73.61.Ph; 85.30.De; 85.65.+hOrganic semiconductor; Memory device; Conduction mechanism; Nanoparticle
Nanostructures for nanoelectronics: No potential for room temperature applications?
Keywords: دستگاه حافظه; Quantum dots; Memory device; VCSELs
Resistive switching effects of HfO2 high-k dielectric
Keywords: دستگاه حافظه; Resistive switching; High-k dielectrics; Memory device
Comparative study of memory-switching phenomena in phase change GeTe and Ge2Sb2Te5 nanowire devices
Keywords: دستگاه حافظه; 64.70.Nd; 73.63.−bPhase change; Nanowire; Memory device; Nanoelectronics; Nanostructure
Carbon nano dots scale by focused ion beam system for MIS diode nano devices
Keywords: دستگاه حافظه; Carbon; Nanocrystal; Memory device; Focused ion beam; Raman spectroscopy; Atomic force microscopy;
Behaviour of injected electrons in high-k dielectric layers
Keywords: دستگاه حافظه; ONO stack; Memory device; High-k dielectrics; Molecular dynamics simulation;
Carbon nanotube shuttle memory device based on singlewall-to-doublewall carbon nanotube transition
Keywords: دستگاه حافظه; 61.46.+w; 66.30.Pa; 83.10.Rs; Singlewall-to-doublewall carbon nanotube transition; Nanopeapod; Memory device; Shuttle memory device; Molecular dynamics simulation;