A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device

A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 433, 1 March 2018, Pages 535-539

Tao Guo, Bai Sun, Shuangsuo Mao, Shouhui Zhu, Yudong Xia, Hongyan Wang, Yong Zhao, Zhou Yu,