Photo-electron double regulated resistive switching memory behaviors of Ag/CuWO4/FTO device

• The CuWO4 nanoparticles were prepared by a hydrothermal method.
• We demonstrated a resistive switching memory with Ag/CuWO4/FTO structure.
• The device shows photo-electron double controlled resistive switching memory.

In this work, the CuWO4 film based resistive switching memory capacitors were fabricated with hydrothermal and spin-coating approaches. The device exhibits excellent photo-electron double controlled resistive switching memory characteristics with OFF/ON resistance ratio of ~103. It is believed that the interface of CuWO4 and FTO is responsible for such a switching behavior and it can be described by the Schottky-like barriers model. This study is useful for exploring the multifunctional materials and their applications in photo-electron double controlled nonvolatile memory devices.