کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1264855 | 972184 | 2010 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Hysteresis-type current–voltage characteristics in Au/eumelanin/ITO/glass structure: Towards melanin based memory devices Hysteresis-type current–voltage characteristics in Au/eumelanin/ITO/glass structure: Towards melanin based memory devices](/preview/png/1264855.png)
Hysteresis behaviour of the current–voltage characteristics collected on spin coated synthetic eumelanin layer embedded in the Au/eumelanin/ITO/glass structure is shown. The effect has been observed under dark both in air and vacuum environment and its magnitude has been found related to the eumelanin hydration state. Moreover, in vacuum and under white light illumination, enhancement of the hysteresis loop area respect to those collected under dark has been observed. Space charge storage and charge trapping/detrapping as possible mechanisms responsible of the observed current–voltage behaviour are discussed. Preliminary experimental results have evidenced the possible integration of eumelanin layers in electro-optical charge storage based memory devices.
Journal: Organic Electronics - Volume 11, Issue 11, November 2010, Pages 1809–1814