کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
747774 1462240 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Resistive switching in lateral junctions with nanometer separated electrodes
ترجمه فارسی عنوان
تعویض مقاومت در اتصالات جانبی با الکترودهای جدا شده با نانومتر
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی

Resistive switching in lateral tunnel junctions is reported. Nanogap tunnel junctions made of Au/SiO2/Au and Au/TiO2/Au were patterned by electrical-beam-lithography (EBL) and a controlled electromigration process. Depending on the substrate material, different reproducible resistive switching characteristics were observed under vacuum conditions. While for TiO2 substrates bipolar resistive switching was observed, nanogap junctions on SiO2 substrates showed resistive switching characteristics with a negative differential resistance. The role of the substrate material with respect to the resistive switching behavior is discussed in the framework of the electrical breakdown. All experiments were performed under vacuum to suppress parasitic effects due to charged particles in ambient air. Nanogap resistive switching devices are promising candidates for densely integrated memresistive systems such as non-volatile resistive random memories (RRAMs), field programmable arrays (FPGAs), or artificial neural networks (ANNs).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 92, February 2014, Pages 24–27
نویسندگان
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