Keywords: Forming; Filament; Switching; Time-voltage dilemma; RRAM;
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Keywords: Memristor; RRAM; Resistive switching; Asymmetric hysteresis; Anodizing; TiO2;
Keywords: Electronic synapse; MIM; Neuromorphic circuits; RRAM; Resistive switching;
Keywords: RRAM; Conduction mechanism;
Keywords: RRAM; Amorphous; SnFe2O4; Forming voltage; Stability
Keywords: OxRAM; RRAM; Variability; Trap assisted tunneling;
Keywords: Random Telegraph Noise (RTN); Anomalous RTN; RRAM; Resistive switching; Trap-Assisted Tunneling (TAT);
Keywords: DFT; RRAM; Transition metal oxides; Resistance switching; Oxygen vacancy;
Keywords: RRAM; Negative differential resistance; Breakdown
Keywords: MIM; Oxide breakdown; Resistive switching; Memristor; RRAM; TiO2;
Keywords: Memory device; Resistive switching; RRAM; Nanogap junction
Keywords: Non-volatile memory; Persistent main memory; PCRAM; RRAM; Memristor
Keywords: Non-volatile memory; Interfacial polymerization; Polypyrrole; Free-standing film; RRAM;
Keywords: RRAM; Transparent RRAM; Oxygen-doped ZrN films
Keywords: RRAM; Hafnium oxide; Reliability
Read margin analysis of crossbar arrays using the cell-variability-aware simulation method
Keywords: Crossbar array; RRAM; Read margin;
Al2O3 thin film multilayer structure for application in RRAM devices
Keywords: Resistive switching; Al2O3 multilayer; Cu; SCLC; Oxygen vacancy; RRAM;
Highly uniform switching of HfO2âx based RRAM achieved through Ar plasma treatment for low power and multilevel storage
Keywords: RRAM; Surface plasma treatment; Multilevel storage; Low power consumption;
Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line
Keywords: RRAM; Non-volatile memory; Nanoparticles; Indium oxide;
A first-principles study of the effects of Au dopants in HfO2-based RRAM
Keywords: RRAM; Au-doped m-HfO2; Conducting filaments; Oxygen vacancy; First-principles;
Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure
Keywords: Resistive switching; RRAM; Hafnium oxide; ALD; Oxygen vacancies;
Design and analysis of 2T2M hybrid CMOS-Memristor based RRAM
Keywords: 1T2M; 2T2M; Memristor; RAM; RRAM; SNM;
A high-precision time-domain RRAM state control approach
Keywords: Precise RRAM state control; RRAM gap-length controllability; Analog application of RRAM; RRAM; Stanford RRAM models;
Robust non-volatile bipolar resistive switching in sol-gel derived BiFeO3 thin films
Keywords: BiFeO3; RRAM; Bipolar switching; Multiferroic materials;
Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM
Keywords: RRAM; Ta2O5/Fe3O4 bilayer; Conducting filaments; Low power consumption; Reliability; In/Ex-situ TEM;
Forming mechanism of Te-based conductive-bridge memories
Keywords: RRAM; CBRAM; Oxygen scavenging; Interface chemistry; HAXPES;
Stable resistive switching characteristics of ZrO2-based memory device with low-cost
Keywords: RRAM; ZrO2; Resistive switching; Low-cost;
Bipolar switching properties and electrical conduction mechanism of manganese oxide RRAM devices
Keywords: Manganese oxide; Thermal annealing process; Bipolar switching properties; RRAM;
HfO2-based resistive switching memory with CNTs electrode for high density storage
Keywords: RRAM; HfO2; Carbon nanotube; High density storage;
Self-directed channel memristor for high temperature operation
Keywords: Memristor; Chalcogenide; Ion-conductor; Neuromorphic; Non-volatile memory; RRAM;
Impact of the HfO2/Al2O3 stacking order on unipolar RRAM devices
Keywords: Al2O3; HfO2; Leakage; RRAM; Temperature;
Multi-temperature deposition scheme for improved resistive switching behavior of Ti/AlOx/Ti MIM structure
Keywords: Resistive switching; RRAM; AlOx; Multi-temperature deposition; Conduction mechanism; Switching mechanism;
Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4Â kbit RRAM arrays performance
Keywords: RRAM; 4Â kbit-Array; Amorphous HfO2; Polycrystalline HfO2; Temperature impact; Forming;
Defect creation in amorphous HfO2 facilitated by hole and electron injection
Keywords: Amorphous HfO2; RRAM; Frenkel defects; Density Functional Theory; Electron injection; Thin films;
Quantitative retention model for filamentary oxide-based resistive RAM
Keywords: RRAM; Retention; Reliability;
Memristive behavior of the SnO2/TiO2 interface deposited by sol-gel
Keywords: Non-volatile memory; Memristor; Sol-gel; Thin film; RRAM; SnO2/TiO2;
Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory
Keywords: Gradual resistance switching; RRAM; Pulse operation; Synaptic device;
Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices
Keywords: Bilayer CeO2/TiO2 films; Effect of annealing; Uniformity; Resistive switching; RRAM;
Multilevel characteristics for bipolar resistive random access memory based on hafnium doped SiO2 switching layer
Keywords: RRAM; Multilevel; Forming; Bipolar; SiO2; Hafnium dopant
An optoelectronic resistive switching memory behavior of Ag/α-SnWO4/FTO device
Keywords: Resistive switching; Memory device; Optoelectronic; Memristor; RRAM
New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM
Keywords: Resistive switching; Random Telegraph Noise; Resolution; Time constants; RRAM;
Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight
Keywords: RRAM; HfO2 dielectrics;
Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices
Keywords: RRAM; Kinetic Monte Carlo; Compliance current; Defect evolution; STM-TEM
Improvement of performances HfO2-based RRAM from elementary cell to 16Â kb demonstrator by introduction of thin layer of Al2O3
Keywords: HfO2; Al2O3; RRAM; Demonstrator; HRS variability; Trap assisted tunneling;
Influence of 120 MeV Au+9 ions irradiation on resistive switching properties of Cr:SrZrO3/SRO junctions
Keywords: RRAM; Resistance switching; Swift heavy ion irradiation; Perovskite oxides; Chemical solution deposition
Read operation performance of large selectorless cross-point array with self-rectifying memristive device
Keywords: Memristive device; Memristor; Crossbar array memory; Verilog-A; Sneak-path currents; RRAM; Read margin; Power consumption
Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 μA)
Keywords: RRAM; Conductive-bridging; CBRAM; PMC; Programming algorithm; Retention; Memory window;
An efficient method for evaluating RRAM crossbar array performance
Keywords: RRAM; Crossbar array; Reduction of RRAM array
GORRAM: Introducing accurate operational-speed radiative transfer Monte Carlo solvers
Keywords: Rapid Monte-Carlo; Simulated annealing; Path recycling; Operational forward model; BL; boundary layer; GORRAM; Generator Of Really Rapid Accurate Monte Carlo; MC; Monte Carlo; PR; path recycling; RRAM; Really Rapid Accurate Monte Carlo; RSM; Representativ
A review of emerging non-volatile memory (NVM) technologies and applications
Keywords: Nonvolatile memory; PCM; STTRAM; RRAM; FeFET; Storage; Memory hierarchy; Emerging architecture; Selector; Neuromorphic computing; Hardware security;