کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7832828 | 1503514 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Highly uniform switching of HfO2âx based RRAM achieved through Ar plasma treatment for low power and multilevel storage
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We demonstrated an effective method of Ar surface plasma treatment (SPT) to improve the resistive switching (RS) uniformity of HfO2âx based resistive random access memory (RRAM) device. More importantly, the operation of multilevel RRAM and low power consumption can be further achieved by reliable RS, which enabled to obtain five distinguishable low resistance states and can be operated with a low power consumption of â¼30â¯pJ. The results of atomic force microscope and X-ray photoelectron spectroscopy analysis confirmed that the Ar SPT induced more oxygen defects and higher roughness on the surface, which decreased the migration barrier of oxygen migration and some tips below the electrode. Eventually, a moderate forming process and local electric-field enhancement around these tips were obtained, accounting for the improvement of RS uniformity. This method could be promising to develop RRAM with high uniformity for the low-power multilevel memory applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 458, 15 November 2018, Pages 216-221
Journal: Applied Surface Science - Volume 458, 15 November 2018, Pages 216-221
نویسندگان
Meng Qi, Ye Tao, Zhongqiang Wang, Haiyang Xu, Xiaoning Zhao, Weizhen Liu, Jiangang Ma, Yichun Liu,