کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5488851 1399586 2017 23 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices
چکیده انگلیسی
Bilayer CeO2/TiO2 films with high-k dielectric property were prepared by rf magnetron sputtering technique at room temperature. Effect of annealing treatment on resistive switching (RS) properties of bilayer CeO2/TiO2 films in O2 ambient at different temperature in the range of 350-550 °C was investigated. Our results revealed that the bilayer films had good interfacial property at 500 °C and this annealing temperature is optimum for different RS characteristics. Results showed that bilayer CeO2/TiO2 film perform better uniformity and reliability in resistive switching at intermediate temperature (i.e. 450 °C and 500 °C) instead of low and high annealing temperature (i.e. 350 °C and 550 °C) at which it exhibits poor crystalline structure with more amorphous background. Less Gibbs free energy of TiO2 as compared to CeO2 results in an easier re-oxidation of the filament through the oxygen exchange with TaN electrode. However, the excellent endurance property (>2500 cycles), data retentions (105 s) and good cycle-to-cycle uniformity is observed only in 500 °C annealed devices. The plots of cumulative probability, essential memory parameter, show a good distribution of Set/Reset voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 17, Issue 10, October 2017, Pages 1303-1309
نویسندگان
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