Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 434, 15 March 2018, Pages 822-830

Andrey Sergeevich Sokolov, Yu-Rim Jeon, Sohyeon Kim, Boncheol Ku, Donghwan Lim, Hoonhee Han, Myeong Gyoon Chae, Jaeho Lee, Beom Gil Ha, Changhwan Choi,