کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5438831 1398188 2017 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Bipolar switching properties and electrical conduction mechanism of manganese oxide RRAM devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Bipolar switching properties and electrical conduction mechanism of manganese oxide RRAM devices
چکیده انگلیسی
Electrical conduction mechanism and bipolar resistive switching properties of the manganese oxide thin films resistive random access memory (RRAM) devices for high resistive status and low resistive status (HRS/LRS) were investigated and discussed. The electrical and physical properties of post-treatment manganese oxide thin films for different oxygen concentration parameters were measured by x-ray diffraction (XRD) and operation current versus applied voltage (I-V) measurement. For I-V curves in different temperature, the ohmic conduction, space charge limited conduction (SCLC), schottky emission conduction, and hopping conduction mechanism of manganese oxide RRAM devices were discussed and verified in initial metallic filament path forming process. Finally, the excess oxygen ions, vacancy, and defect factor resulting in bipolar and unipolar resistive switching behavior of thin films RRAM devices will be explained and investigated by metallic filament path forming model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Supplement 1, August 2017, Pages S253-S257
نویسندگان
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