Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method

• The resistive switching characteristics of the transparent O-doped ZrNx-based RRAM cells have investigated.
• Oxygen doping concentration within ZrNx is optimized using working pressure of sputter.
• Long retention time were observed.

In this work, we present a feasibility of bipolar resistive switching (RS) characteristics for Oxygen-doped zirconium nitride (O-doped ZrNx) films, produced by sputtering method, which shows a high optical transmittance of approximately 78% in the visible region as well as near ultra-violet region. In addition, in a RS test, the device has a large current ratio of 5 × 103 in positive bias region and 5 × 105 in negative bias region. Then, to evaluate an ability of data storage for the proposed memory devices, we measured a retention time for 104 s at room temperature (RT) and 85 °C as well. As a result, the set and reset states were stably maintained with a current ratio of ∼102 at 85 °C to ∼103 at RT. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit the ZrNx films could be a milestone for future see-through electronic devices.

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