An optoelectronic resistive switching memory behavior of Ag/α-SnWO4/FTO device

• α-SnWO4 nanoparticles were synthesized by a hydrothermal process.
• A resistive switching memory device with Ag/α-SnWO4/FTO structure is demonstrated.
• The device presents an optoelectronic bipolar resistive switching memory behavior.

It is known to all of us that the resistive switching memory behavior of metal-oxide-metal structure device is a fascinating candidate for next generation nonvolatile memories. In this work, α-SnWO4 nanoparticles were synthesized by a hydrothermal process. Further, a resistive switching memory device with Ag/α-SnWO4/FTO structure is demonstrated. The device presents an optoelectronic bipolar resistive switching memory behavior at room temperature. This study is useful for exploring multifunctional materials and their applications in optoelectronic nonvolatile memory devices.

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