کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1783895 1524108 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-frequency noise properties of p-type GaAs/AlGaAs heterojunction detectors
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
Low-frequency noise properties of p-type GaAs/AlGaAs heterojunction detectors
چکیده انگلیسی
We have measured and analyzed, at different temperatures and bias voltages, the dark noise spectra of GaAs/AlGaAs heterojunction infrared photodetectors, where a highly doped GaAs emitter is sandwiched between two AlGaAs barriers. The noise and gain mechanisms associated with the carrier transport are investigated, and it is shown that a lower noise spectral density is observed for a device with a flat barrier, and thicker emitter. Despite the lower noise power spectral density of flat barrier device, comparison of the dark and photocurrent noise gain between flat and graded barrier samples confirmed that the escape probability of carriers (or detectivity) is enhanced by grading the barrier. The grading suppresses recombination owing to the higher momentum of carriers in the barrier. Optimizing the emitter thickness of the graded barrier to enhance the absorption efficiency, and increase the escape probability and lower the dark current, enhances the specific detectivity of devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 78, September 2016, Pages 99-104
نویسندگان
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