Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure

• Electric field induced phase transition of VO2 thin film is proposed.
• Optical modulation has been studied based on FTO/VO2/FTO structure.
• Maximum transmission modulation value is 31.4% under different conditions.

A VO2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO2 (FTO) conductive glass substrate. The FTO/VO2/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I–V hysteresis loop for the FTO/VO2/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO2/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.