Keywords: ولتاژ آستانه; Current source; Low voltage swing; Threshold voltage; Static CMOS; Dynamic CMOS; Leakage current;
مقالات ISI ولتاژ آستانه (ترجمه نشده)
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Keywords: ولتاژ آستانه; Liquid crystal nano composites; Dielectric permittivity; Anisotropy; Relaxation frequency; Conductivity; Threshold voltage; Splay elastic constant;
Keywords: ولتاژ آستانه; Threshold voltage; Signal conditioning circuit; Thermistor linearization; Temperature transducer; 555-Timer;
Keywords: ولتاژ آستانه; OFET; Compact model; Threshold voltage; Charge based;
Keywords: ولتاژ آستانه; Polymer; Silica nanoparticles; Polymer dispersed liquid crystals; Morphology; Relative transmission; Threshold voltage;
Keywords: ولتاژ آستانه; Current sources; Low voltage swing; Threshold voltage; Comparator; Leakage current; Crosstalk;
Keywords: ولتاژ آستانه; Threshold voltage; Single walled carbon nanotubes; Organic photovoltaic devices; Trap energy;
Keywords: ولتاژ آستانه; Pentacene; Field effect transistor; Threshold voltage; Trap; Monolayer; Accumulation layer;
Keywords: ولتاژ آستانه; Pentacene; Organic phototransistor; Bias stress; Threshold voltage; Thin film transistor
Keywords: ولتاژ آستانه; 3-D compact model; Triple-gate JLT; Nanowire JLT; SCE; Fin height capacitance; Threshold voltage
Keywords: ولتاژ آستانه; Single-walled carbon nanotube transistors; Solution-process; Threshold voltage; Y-function method
Keywords: ولتاژ آستانه; Reliability; Nanowire; BTI; Threshold voltage; DIT;
Keywords: ولتاژ آستانه; Tunnel field-effect transistor (FET); Threshold voltage; Back bias;
Keywords: ولتاژ آستانه; Indium zinc oxide; Thin film transistors; Threshold voltage; Microwave annealing;
Keywords: ولتاژ آستانه; Laser diode; Ideality factor; Threshold voltage;
Keywords: ولتاژ آستانه; Indium–zinc tin-oxide thin-film transistor; Dual-channel layer; Threshold voltage; Oxygen partial pressure
Keywords: ولتاژ آستانه; Thin film transistors; Threshold voltage; Drain current; Post-irradiation stability;
Keywords: ولتاژ آستانه; Thermal management; Electronic equipment cooling; Electrohydrodynamics; Ionic wind; Threshold voltage; Spark-over voltage
Keywords: ولتاژ آستانه; 2D; two-dimensional; ARPES; angle-resolved photoemission spectroscopy; An-CH3; 9,10-dimethylanthracene; An-Br; 9,10-dibromoanthracene; AIE; aggregation induced emission; BSA; bovine serum albumin; CVD; chemical vapor deposition; CFG; chemical functionaliz
Keywords: ولتاژ آستانه; AlGaN/GaN HEMT; Gate dielectrics; Threshold voltage; Power devices; Lanthanum oxide
Keywords: ولتاژ آستانه; NMOSFET; Threshold voltage; BSIM3
Investigation of radiation hardened SOI wafer fabricated by ion-cut technique
Keywords: ولتاژ آستانه; Silicon-on-Insulator; Total ionizing dose; Radiation hardening; Ion-cut; Si nanocrystals; Threshold voltage;
Threshold voltage modulation mechanism of high-performance normally-off AlGaN/GaN gates-separating groove HFET
Keywords: ولتاژ آستانه; E-mode; Threshold voltage; Drain current density; GSG;
Effects of manganese (II) titanium oxide nano particles on the physical properties of a room temperature nematic liquid crystal 4-(trans-4â²-n-hexylcyclohexyl) isothiocyanatobenzene
Keywords: ولتاژ آستانه; Liquid crystals; Nano particles; Thermodynamic; Threshold voltage; Dielectric anisotropy;
Device behaviour and zero temperature coefficients analysis for microwave GaAs HEMT
Keywords: ولتاژ آستانه; Zero-temperature-coefficients (ZTCs); GaAs based high-electron mobility transistor (HEMT); Threshold voltage; Device behaviour; Temperature;
SiC MOSFET threshold-stability issues
Keywords: ولتاژ آستانه; SiC; MOSFET; Semiconductor device reliability; Threshold voltage;
Structure properties and electrical mechanisms of Si(001)/SiO2 interface with varying Si layer thickness in nano-scale transistor
Keywords: ولتاژ آستانه; Si(001)/SiO2; Si layer thickness; Stress/strain; Surface potential; Threshold voltage; Subthreshold swing;
Analytical model of surface potential and threshold voltage in gate-drain overlap FinFET
Keywords: ولتاژ آستانه; FinFET; Surface potential; Threshold voltage; Overlap;
A modified two dimensional analytical model for short-channel fully depleted SOI MESFET's
Keywords: ولتاژ آستانه; SOI-MESFET; Analytical modeling; Boundary conditions; Superposition method; Orthogonality property; Channel potential; Threshold voltage; Subthreshold swing;
Alkoxy substituted [1]benzothieno[3,2-b][1]benzothiophene derivative with improved performance in organic thin film transistors
Keywords: ولتاژ آستانه; Liquid crystal; Threshold voltage; Alkoxy group; OTFT; BTBT;
Aging mitigation of L1 cache by exchanging instruction and data caches
Keywords: ولتاژ آستانه; Aging; Bias temperature instability; On-chip memories; Threshold voltage;
Source engineered tunnel FET for enhanced device electrostatics with trap charges reliability
Keywords: ولتاژ آستانه; ON-state current; High frequency parameters; Source metal electrode; Threshold voltage;
Carbamazepine-induced suppression of repetitive firing in CA1 pyramidal neurons is greater in the dorsal hippocampus than the ventral hippocampus
Keywords: ولتاژ آستانه; mTLE; medial temporal lobe epilepsy; AED; anti-epileptic drug; DHC; dorsal hippocampus; dIHC; dorsal intermediate hippocampus; vIHC; ventral intermediate hippocampus; VHC; ventral hippocampus; ISA; somatodendritic A-type current; IM; m-current; GIRK; chan
Interpretation of 60Co radiation effects in metal-oxide semiconductors in terms of the mobility and interface trap density with a drain current-gate voltage model
Keywords: ولتاژ آستانه; Dosage; Drain current; Gate voltage; Prediction; Threshold voltage;
Threshold voltage tuning in AlGaN/GaN HFETs with p-type Cu2O gate synthesized by magnetron reactive sputtering
Keywords: ولتاژ آستانه; GaN-based HFETs; p-Type Cu2O; Sputtering power; Threshold voltage;
Performance improvement of doped TFET by using plasma formation concept
Keywords: ولتاژ آستانه; Ambipolar conduction; Band to band tunneling; Material solubility; Surface plasma formation; Threshold voltage;
A short review on: Optimization techniques of ZnO based thin film transistors
Keywords: ولتاژ آستانه; Thin film transistors; Active-matrix liquid-crystal display; Mobility; Threshold voltage; ZnO; Leakage current;
Evolution of electro-chemical and electro-optical properties of nematic liquid crystal doped with graphene oxide
Keywords: ولتاژ آستانه; Graphene oxide; Dielectric properties; Threshold voltage; Electro-optic; switching-off time;
Influence of the morphology of the copper(II) phthalocyanine thin film on the performance of organic field-effect transistors
Keywords: ولتاژ آستانه; OTFT; Copper phthalocyanine; Solvent vapor annealing; Threshold voltage; Mobility;
An enhanced MOSFET threshold voltage model for the 6-300Â K temperature range
Keywords: ولتاژ آستانه; Cryogenic electronics; Threshold voltage; MOSFETs;
Asymmetrically doped stacked channel strained SOI FinFET
Keywords: ولتاژ آستانه; Asymmetric doping; SSOI; Threshold voltage; OFF current; Stack;
The effect of interface-induced structural properties of the pentacene accumulation layer on the threshold voltage: Pentacene monolayer transistors
Keywords: ولتاژ آستانه; Threshold voltage; Pentacene; Nexafs; Fet; Accumulation layer;
Analysis of photoluminescence, UV absorbance, optical band gap and threshold voltage of TiO2 nanoparticles dispersed in high birefringence nematic liquid crystal towards its application in display and photovoltaic devices
Keywords: ولتاژ آستانه; TiO2 nanoparticles; High birefringence; Nematic liquid crystal; Photoluminescence; Optical band gap; Dielectric anisotropy; Threshold voltage;
Threshold voltage modulation of polymer transistors by photoinduced charge-transfer between donor-acceptor dyads
Keywords: ولتاژ آستانه; Conjugated polymers; Polymer field-effect transistors; Threshold voltage; Photoinduced charge-transfer; Density functional theory calculation;
Novel tri-independent-gate FinFET for multi-current modes control
Keywords: ولتاژ آستانه; Tri-independent-gate; FinFET; Threshold voltage; TCAD;
Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14Â nm UTBB FDSOI technology
Keywords: ولتاژ آستانه; CMOS; Ultra-Thin-Body and Buried-Oxide Fully-Depleted-On-Insulator (UTBB FDSOI); SiGe; Stress; Strain; Layout effects; Length of diffusion (LOD); SA/SB parameters; Threshold voltage; Mobility;
Threshold adjustment of receiver chip to achieve a data rate >66Â Gbit/sec in point to point interconnect
Keywords: ولتاژ آستانه; Driver; Receiver; Data rate; ISI noise; Threshold voltage; Design margin;
Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements
Keywords: ولتاژ آستانه; MOSFET; CMOS; Threshold voltage; Junction capacitance; Parameter extraction;
On the definition of threshold voltage for tunnel FETs
Keywords: ولتاژ آستانه; TFET; Threshold voltage; Short-channel effect; Nonlocal field model;
Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks
Keywords: ولتاژ آستانه; FinFET; Halo; Work function; Punch through stop pocket; Threshold voltage; High k metal gate;