کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7940417 1513194 2017 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
On the definition of threshold voltage for tunnel FETs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
On the definition of threshold voltage for tunnel FETs
چکیده انگلیسی
This paper proposes how to experimentally define the threshold voltage for various TFETs based on the theoretical point of view. We propose that the gate voltage defined corresponding to the peak of normalized transconductance is effectively the threshold voltage of TFETs. We also demonstrate that this definition is valid for different structures of TFET. In addition, we address the short-channel effect with such definition of threshold voltage for lateral TFET. It is shown that the short-channel effect significantly increased the off-current and the threshold voltage due to the extension of the drain potential and degradation of gate-field integrity in TFETs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 107, July 2017, Pages 17-27
نویسندگان
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