کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7150193 | 1462186 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Device behaviour and zero temperature coefficients analysis for microwave GaAs HEMT
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Detailed analysis of device behaviour on the zero-temperature coefficient (ZTC) points for microwave GaAs based high-electron mobility transistor is presented by means of on-wafer measurements over the temperatures between â40 and 150â¯Â°C. This zero temperature coefficient points found not only in the transfer and transconductance curve but also in intrinsic transconductance gmo, output conductance gds, small signal gain S21, and minimum noise figure NFmin also exhibits ZTC. It is found that the zero temperature coefficients points are impacted by both threshold voltage and drain bias. The transfer current base, ZTCIds moved from 0.1â¯V to â0.2â¯V of Vgs trace and transconductance based, ZTCgm moved from â0.3â¯V to â0.6â¯V of Vgs trace with the drain bias, Vds varies from 1â¯V to 5â¯V. The behaviour of some intrinsic equivalent circuit parameters along with cut-off frequency, ft at both ZTC bias points opens some crucial insight and opportunities in microwave device design for low and high temperature applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 147, September 2018, Pages 13-18
Journal: Solid-State Electronics - Volume 147, September 2018, Pages 13-18
نویسندگان
Mohammad A. Alim, Ali A. Rezazadeh,