A short review on: Optimization techniques of ZnO based thin film transistors

There has been a significant global interest in the thin film transistor (TFT) due to its potential use in flat panel display. A great deal of interest in zinc oxide (ZnO) based TFT has been developed owing to its promising electronic and optoelectronic properties. The performance of a TFT is mainly measured by calculating the turn-on voltage, drain current on-to-off ratio (Ion/Ioff) and channel mobility that depends on many factors like crystallanity of the active layer, quality of the insulator, and the quality of the interface between the different layers (semiconductor, insulator, and metallic contacts). All these factors further depend upon the growth and processing condition of different layers. This paper presents a short review that includes the factors affecting the performance of ZnO-based TFT and the methods to optimize them. The related work of reputed research groups are summarized and discussed systematically in the paper.