کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7835566 | 1503535 | 2018 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Threshold voltage tuning in AlGaN/GaN HFETs with p-type Cu2O gate synthesized by magnetron reactive sputtering
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In present study, copper oxide films were prepared at different sputtering powers (10-100â¯W) using magnetron reactive sputtering. The crystalline structure, surface morphologies, composition, and optical band gap of the as-grown films are dependent on sputtering power. As the sputtering power decreasing from 100 to 10â¯W, the composition of films changed from CuO to quasi Cu2O domination. Moreover, when the sputtering power is 10â¯W, a relative high hole carrier density and high-surface-quality quasi Cu2O thin film can be achieved. AlGaN/GaN HFETs were fabricated with the optimized p-type quasi Cu2O film as gate electrode, the threshold voltage of the device shows a 0.55â¯V positive shift, meanwhile, a lower gate leakage current, a higher ON/OFF drain current ratio of â¼108, a higher electron mobility (1465â¯cm2/Vs), and a lower subthreshold slope of 74â¯mV/dec are also achieved, compared with the typical Ni/Au-gated HFETs. Therefore, Cu2O have a great potential to develop high performance p-type gate AlGaN/GaN HFETs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 437, 15 April 2018, Pages 98-102
Journal: Applied Surface Science - Volume 437, 15 April 2018, Pages 98-102
نویسندگان
Lei Wang, Liuan Li, Tian Xie, Xinzhi Wang, Xinke Liu, Jin-Ping Ao,