Notes on the plasma resonance peak employed to determine doping in SiC

• The article provides a review of past research and information about the plasma resonance in silicon carbide.
• Attention was given to all parameters involved for the three most common polytypes of SiC.
• The second plasma resonance was investigated.
• An explanation for not observing the 2nd plasma minimum in 3C-SiC is provided.

The doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.