Keywords: غلظت دوپینگ; Solar cell; Quantum dot; Flat intermediate band; Quantum efficiency; Fermi energy level; Doping concentration;
مقالات ISI غلظت دوپینگ (ترجمه نشده)
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Keywords: غلظت دوپینگ; Organic light-emitting diodes; Lifetime; Delayed fluorescence; Doping concentration
Keywords: غلظت دوپینگ; polymer light-emitting electrochemical cell; electrochemical doping; dedoping; doping concentration; conjugated polymer;
Keywords: غلظت دوپینگ; Metal assisted chemical etching; Silver particles; Platinum particles; Etch rate; Doping concentration
Keywords: غلظت دوپینگ; Electroluminescence; Doping concentration; Electron injection; Electron transport
Impacts of doping concentration on the saturable characteristics of Tm-Ho codoped fiber saturable absorber
Keywords: غلظت دوپینگ; Fiber saturable absorber; Q-switching; Doping concentration;
Simulation study of the n-c-Si(Sb)/p-c-Si structure suitable for solar cells devices
Keywords: غلظت دوپینگ; Solar cell; c-Si; Thickness; Doping concentration; Sun concentration; Efficiency;
PIXE detection limit for aluminium thin film deposited on Si-based matrix
Keywords: غلظت دوپینگ; PIXE; Low energy PIXE; Doping concentration; Si; SiC; Al;
First principles study of crystal Si-doped Ge2Sb2Te5
Keywords: غلظت دوپینگ; GST; First-principles; Si-doping; Doping concentration;
Enhanced conversion efficiency of Cr4+ ion in Cr: YAG transparent ceramic by optimizing the annealing process and doping concentration
Keywords: غلظت دوپینگ; Cr; YAG ceramic; Conversion efficiency; Annealing; Doping concentration; Optical property;
Influence of surface near doping concentration on contact formation of silver thick film contacts
Keywords: غلظت دوپینگ; Contact formation; Current conduction; Screen printing; Silver contacts; Doping concentration; Bifacial;
Effect of doping concentration on particle growth and luminescence properties of monodispersed Dy3+: Y2O3
Keywords: غلظت دوپینگ; Doping concentration; Particle size; Growth mechanism; Luminescence; WLEDs;
Kelvin Force Microscopy and corona charging for semiconductor material and device characterization
Keywords: غلظت دوپینگ; Kelvin force microscopy; Corona charging; Effective work function; Kinetic CV; Doping concentration; Non visual defects;
Near-infrared absorption-emission cross-sections of PbSe quantum dots doped in UV gel
Keywords: غلظت دوپینگ; PbSe quantum dot; Absorption cross-section; Emission cross-section; Doping concentration; Wavelength dependence;
Notes on the plasma resonance peak employed to determine doping in SiC
Keywords: غلظت دوپینگ; Infrared reflectance; SiC; Plasma resonance; Doping concentration
The effect of Cu doping concentration on resistive switching of HfO2 film
Keywords: غلظت دوپینگ; HfO2:Cu film; Resistive switching; Doping concentration; Mechanism;
Structural and electrical properties of Sn-doped Ga1.375In0.625O3 with different doping concentrations
Keywords: غلظت دوپینگ; First-principle; Sn-doped Ga1.375In0.625O3; Structural properties; Electrical properties; Doping concentration
Design and optimization of beta-cell temperature sensor based on 63Ni–Si
Keywords: غلظت دوپینگ; Silicon beta-cell temperature sensor; Nickel-63; MCNP4C Monte Carlo code; Doping concentration; Junction depth
17.3% efficient black silicon solar cell without dielectric antireflection coating
Keywords: غلظت دوپینگ; Black silicon; Solar cell; Doping concentration; Carrier recombination;
Dependence of temperature coefficient of frequency (TCf) on crystallography and eigenmode in N-doped silicon contour mode micromechanical resonators
Keywords: غلظت دوپینگ; Temperature coefficient of frequency; Micromechanical resonator; Single crystal silicon; Doping concentration; Microelectromechanical systems (MEMS)
Analytical model for quasi-static C–V characteristics of strained-Si/SiGe pMOS capacitor
Keywords: غلظت دوپینگ; Strained-Si; pMOS capacitor; C–V characteristic; Doping concentration
EELS measurements of boron concentration profiles in p-a-Si and nip a-Si solar cells
Keywords: غلظت دوپینگ; Electron energy loss spectroscopy (EELS); Thin film Si; Transmission electron microscopy; p-Type SiC; Doping concentration
Influence of the antireflection, window, and active layers on optical properties of exponential-doping transmission-mode GaAs photocathode modules
Keywords: غلظت دوپینگ; 160.2100; 310.6860; GaAs photocathode; Transmission-mode; Optical properties; Thickness; Doping concentration;
Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors
Keywords: غلظت دوپینگ; Graphene nanoribbon; Tunneling field-effect transistors; Heterojunction; Doping concentration; Device performance
Optimizing blue iridium complex and orange-red osmium complex doping concentrations to improve phosphorescent white organic light emitting diodes
Keywords: غلظت دوپینگ; Phosphorescent white organic light emitting diode; Co-doping; Doping concentration
Effect of doping concentration on broadband near-infrared emission of Bi doped zeolites
Keywords: غلظت دوپینگ; Zeolite; Near-infrared emission; Bismuth; Optical properties; Doping concentration
Drive current enhancement in p-tunnel FETs by optimization of the process conditions
Keywords: غلظت دوپینگ; Tunnel FET; Band to band tunneling; Oxide thickness; Doping concentration; Anneal;
Influence of doping concentrations on the aluminum doped zinc oxide thin films properties for ultraviolet photoconductive sensor applications
Keywords: غلظت دوپینگ; Al Doped ZnO; Sol–gel spin-coating method; UV photoconductive sensor; Doping concentration; XRD; UV–vis-NIR spectrophotometer; I–V measurement; Photocurrent measurement
Effects of emitter parameters and recombination mechanisms on the performance of β-FeSi2/c-Si heterojunction solar cells
Keywords: غلظت دوپینگ; β-FeSi2; Solar cell; Emitter thickness; Doping concentration; Recombination
Bright electroluminescent devices with tunable spectra obtained by strictly controlling the doping concentration of electron injection sensitizer
Keywords: غلظت دوپینگ; Electroluminescence; Doping concentration; Electron injection; Band bending;
Modelling of recombination velocity and doping influence in epitaxial silicon solar cells
Keywords: غلظت دوپینگ; UMG: upgraded metallurgical grade; Epitaxial solar cells; Recombination velocity; Doping concentration; QE: quantum efficiency
Feasibility analysis of radiation balanced laser
Keywords: غلظت دوپینگ; Doping concentration; Fluorescence; Slab laser; Ytterbium
Influence of doping concentration on room-temperature ferromagnetism for Fe-doped BaTiO3 ceramics
Keywords: غلظت دوپینگ; 75.50.Ss; 61.72.Ww; 75.60.Ej; 76.80.+yFe-doped BaTiO3; Doping concentration; Ferromagnetism; Mössbauer spectroscopy
Organic light-emitting diodes based on new n-doped electron transport layer
Keywords: غلظت دوپینگ; Organic light-emitting diodes; Doping concentration; Carrier transport; Conductivity
Theoretical study of the density of states and magnetic properties of electron-doped Sr1âxCexCoO3 compounds
Keywords: غلظت دوپینگ; 71.20.âb; 75.25.+z; 75.47.Gk; 75.50.ây; Recursion method; Hartree-Fock approximation; Density of state; Doping concentration; Spin state; Magnetic ground state;
Discharge power dependence of structural and electrical properties of Al-doped ZnO conducting film by magnetron sputtering (for PDP)
Keywords: غلظت دوپینگ; ZnO:Al; Discharge power; Doping concentration; AC PDP; Luminance property
Influence of doping concentration on the properties of ZnO:Mn thin films by sol–gel method
Keywords: غلظت دوپینگ; ZnO thin films; Doping concentration; Mn; (0 0 2) peaks; Resistivity; XPS
Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
Keywords: غلظت دوپینگ; Nonvolatile memory; Resistive random access memory (RRAM); Resistive switching; SrZrO3; Doping concentration
Change of the dominant luminescent mechanism with increasing current density in molecularly doped organic light-emitting devices
Keywords: غلظت دوپینگ; Current density; Doping concentration; Carrier trapping; Förster energy transfer; Efficiency roll-off;
Electronic, chemical and structural change induced by organic solvents in tosylate-doped poly(3,4-ethylenedioxythiophene) (PEDOT-OTs)
Keywords: غلظت دوپینگ; Poly(3,4-ethylenedioxythiophene); Tosylate (p-toluene sulfonate); Organic solvent; Electrical conductivity; Doping concentration;
SOI technology characterization using SOI-MOS capacitor
Keywords: غلظت دوپینگ; SOI technology; SOI-MOS capacitor; Electrical characterization; Doping concentration; Oxide charge density; Oxide and silicon film thickness;