Simulation study of the n-c-Si(Sb)/p-c-Si structure suitable for solar cells devices

In this work, we have optimized by simulation a solar cell n-c-Si(Sb)/p-c-Si structure, which is obtained by the recoil implantation of antimony (Sb) in crystalline silicon (c-Si). However the parameter structures (emitter thickness (Xj) for n-c-Si(Sb) layer, base thickness (Xb) for p-c-Si layer, donor doping concentration (Nd) and acceptor doping concentration (Na)) which have influences on the main solar cell characteristics like short-circuit current (JSC), open-circuit voltage (VOC), fill factor (FF) and efficiency (Eff) was taken into account. We suggest that a such component is more stable against unknown damages and will present a long life due to the annealing treatment at a high temperature (850°), which gives it a good stability. By using numerical method, all calculations have been carried out by developing a model to predicate the output parameters of the present pretended solar cell. Accordingly, with optimized structure parameters (Na = Nd = 1017 cm −3, Xj range from 0.05 to 0.1 μm and Xb = 300 μm) such solar cell presents an efficiency of 17.00% for AM 1.5 and 22.11% under sun concentration. For these reasons, the n-c-Si(Sb)/p-c-Si structure is considered as a promising solar cell component.