کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1443754 | 1509459 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Organic light-emitting diodes based on new n-doped electron transport layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Organic light-emitting diodes with 8-hydroxy-quinolinato lithium doped 4′7-diphyenyl-1, 10-phenanthroline as electron transport layer (ETL), and etrafluro-tetracyano-quinodimethane doped 4,4′,4″-tris(3-methylphenylphenylamono) triphenylamine as hole transport layer (HTL) are demonstrated. The conductivity of carrier transport layers with different doping concentration is examined by hole-only and electron-only devices. Compared with the referenced device (without doping), the current efficiency and power efficiency of the p–i–n device are enhanced by approximately 51% and 89%, respectively. This improvement is attributed to the improved conductivity of the transport layers and the efficient charge balance in the emission zone.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 158, Issues 21–24, December 2008, Pages 810–814
Journal: Synthetic Metals - Volume 158, Issues 21–24, December 2008, Pages 810–814
نویسندگان
J.W. Ma, Wei Xu, X.Y. Jiang, Z.L. Zhang,