کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1809551 1525203 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural and electrical properties of Sn-doped Ga1.375In0.625O3 with different doping concentrations
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Structural and electrical properties of Sn-doped Ga1.375In0.625O3 with different doping concentrations
چکیده انگلیسی

The structural properties, band structure and density of states of Sn-doped Ga1.375In0.625O3 with different doping concentrations are studied by using the first-principle method. Results show that the lattice parameters have a tendency to increase due to the introduction of Sn dopant. There is a strong ionic bonding between O atoms and Sn atoms and the charge transports from Sn atoms to O atoms. Due to the heavy doping, the Fermi level of Sn-doped Ga1.375In0.625O3 shifts into the conduction band, and the n-type metallic conductivity is exhibited. The band tail of the new degenerate bands extends into the forbidden band, resulting in the band gap narrowing effect. In the heavy doping concentration range of 2.5–5 at%, the calculated electron effective mass slightly changes, the relative electron number increases, and the electron mobility decreases. Thus, the conductivity of Sn-doped Ga1.375In0.625O3 is enhanced slightly.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 443, 15 June 2014, Pages 125–129
نویسندگان
, , , ,