کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1784099 1524113 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1 = 5.2 μm, 300 K) operating in the 77-353 К temperature range
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1 = 5.2 μm, 300 K) operating in the 77-353 К temperature range
چکیده انگلیسی
Double heterostructure back-side illuminated photodiodes with a 10-μm thick InAs0.9Sb0.1 active layer have been fabricated, studied and characterized in the 77-353 K temperature range. Spectral response peculiarities and temperature induced peak shift (λ = 4-4.8 μm) were explained within simple phenomenological model based on proximity of the active layer thickness and hole diffusion length while reasons for a sensitivity decrease at low temperatures are still less evident. Transition from a generation-recombination to a diffusion current flow mechanisms with temperature increase appeared to be close to that for the InAs based diodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 73, November 2015, Pages 232-237
نویسندگان
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