Keywords: جریان تاریک; Perovskites; Methylammonium iodide; Intrinsic defect; Photodetectors; Photoluminescence; Crystallite size; Degradation rate; Dark current;
مقالات ISI جریان تاریک (ترجمه نشده)
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Keywords: جریان تاریک; Photo detector; InSb; Infrared; Dark current;
Keywords: جریان تاریک; Electron acceptor copolymers; Acceptor polymer blend; All-polymer photodetector; Dark current; Photocurrent;
Keywords: جریان تاریک; Organic photodetector; Inkjet printing; Electron blocking layer; Dark current; Surfactant;
Keywords: جریان تاریک; Displacement damage; Defect annealing; Dark current; Photodiodes; Multiscale modeling
Keywords: جریان تاریک; Avalanche photodetector; Far infrared; Quantum ring intersubband photodetector; Dark current
Keywords: جریان تاریک; Unipolar barrier; Infrared detector; Infrared photodetector; Dark current; Band edge engineering
Keywords: جریان تاریک; Bilayer graphene terahertz photdetector; Dark current; Detectivity; Room temperature; Responsivity
Keywords: جریان تاریک; Dark current; Photocathode RF gun; Bunching cavity; Background photons; Thomson scattering X-ray source
Keywords: جریان تاریک; Dark current; BHJ device; Workfunction; Sol-gel metal oxide; Buffer layer;
Keywords: جریان تاریک; X-ray imaging detectors; Polycrystalline mercuric iodide; Dark current; Carrier injections; Thermal generation;
Keywords: جریان تاریک; Quantum ring inter-subband photodetector; Dark current; Resonant tunnelling barrier; Detectivity;
Keywords: جریان تاریک; DSSC; Cobalt mediators; Surface passivation; Dark current; Silanization
Keywords: جریان تاریک; Photodetector; Graphene nanoribbon (GNR); Non-equilibrium Green's function (NEGF); Photocurrent; Dark current; Responsivity; Quantum efficiency;
Keywords: جریان تاریک; Organic solar cells; OPV; Dark current; Tensile strain;
Mid-wavelength infrared unipolar nBp superlattice photodetector
Keywords: جریان تاریک; MWIR detectors; Type-II strained layer superlattice; Barrier engineering; Dark current; Quantum efficiency;
Nanostructures with Ge-Si quantum dots for infrared photodetectors
Keywords: جریان تاریک; Molecular beam epitaxy; Heterostructures; Dark current; Noise; Detectivity;
Analysis injection area-dark current characteristics for mid-wavelength HgCdTe photodiodes
Keywords: جریان تاریک; HgCdTe; Dark current; Injection area; Reverse welding pressure; Arrangement of common electrode;
Dark current improvement due to dry-etch process in InAs/GaSb type-II superlattice LWIR photodetector with nBn structure
Keywords: جریان تاریک; InAs/GaSb type-II superlattice; Long wavelength infrared; nBn detector; Dark current;
Analysis of triple metal surrounding gate (TM-SG) III-V nanowire MOSFET for photosensing application
Keywords: جریان تاریک; ATLAS-3D; Dark current; Photosensor; Quantum efficiency; Responsivity; TM-SG nanowire MOSFET;
Interconnected ZrO2 doped ZnO/TiO2 network photoanode for dye-sensitized solar cells
Keywords: جریان تاریک; ZrO2 passivated ZnO/TiO2 hetero-phase composite; Mesoporous films dye-sensitized solar cells; Dark current; Equivalent circuit model;
Study of dark current for LWIR HgCdTe detectors with a graded doped junction
Keywords: جریان تاریک; Doping changed; Dark current; LWIR; HgCdTe infrared detectors;
Integration of 555 temperature sensors into a 64 Ã 192 CMOS image sensor
Keywords: جریان تاریک; CMOS image sensors; BJT temperature sensor; Dark current;
In0.83Ga0.17As photodetectors with different doping concentrations in the absorption layers
Keywords: جریان تاریک; InGaAs; Wavelength-extended; Photodetector; Dark current;
Effects of finger dimension on low-frequency noise and optoelectronic properties of Ge metal-semiconductor-metal photodetectors with interdigitated Pt finger electrodes
Keywords: جریان تاریک; Ge MSM photodetector; Dark current; NPDR; 1/f noise; Electric field crowding; Current crowding;
High performance photomultiplication perovskite photodetectors with PC60BM and NPB as the interlayers
Keywords: جریان تاریک; Perovskite; Photodetectors; Dark current; Detectivity;
Reduction of dark current and gain increase in InAs avalanche photodiode with AlGaAs blocking layer
Keywords: جریان تاریک; Dark current; Avalanche gain; Blocking layer; Excess noise factor;
Modelling of high-temperature dark current in multi-quantum well structures from MWIR to VLWIR
Keywords: جریان تاریک; Quantum well; Dark current; Probability-flux operator; Semiconductor devices; Infrared photodetectors; Computational modelling;
Application of nitrogen-doped TiO2 nano-tubes in dye-sensitized solar cells
Keywords: جریان تاریک; Dye-sensitized solar cell; TiO2 nano-tubes; N-doped TiO2; TiO2 surface modification; Dark current;
Dark current mechanisms and spectral response of SiO2-passivated photodiodes based on InAs/GaSb superlattice
Keywords: جریان تاریک; InAs/GaSb; Passivation; Dark current; Mechanism;
Design of InAs/GaSb superlattice infrared barrier detectors
Keywords: جریان تاریک; InAs/GaSb superlattice; Barrier detector; Infrared detector; TCAD simulation; Dark current;
Simulation of dark current suppression in p–i–n InGaAs photodetector with In0.66Ga0.34As/InAs superlattice electron barrier
Keywords: جریان تاریک; Photodetector; Superlattice; Simulation; Dark current
Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes
Keywords: جریان تاریک; Mid-IR detectors; InAs photodiodes; Infrared sensors; Dark current; Backside illuminated photodiodes; Pyrometry; IR gas sensors;
Type-II InAs/GaSb photodiode array pixel isolation by femto-second laser anneal
Keywords: جریان تاریک; Type-II InAs/GaSb superlattice; Femto-second laser anneal; Pixel isolation; Dark current
P-InAsSbP/n-InAs single heterostructure back-side illuminated 8Â ÃÂ 8 photodiode array
Keywords: جریان تاریک; HOT mid-IR detectors; InAs photodiodes; Infrared sensors; Dark current; Backside illuminated photodiodes; Pyrometry; IR gas sensors;
Degradation and annealing studies on gamma rays irradiated COTS PPD CISs at different dose rates
Keywords: جریان تاریک; CMOS image sensor (CIS); Dose rate; Total ionizing dose (TID); Radiation damage; Annealing; Dark current;
Extracting dark current components and characteristics parameters for InGaAs/InP avalanche photodiodes
Keywords: جریان تاریک; InGaAs/InP; Numerical simulation; Dark current; Avalanche photodiodes;
The use of interface-sensitive test structure comprising of shallow trench isolation as a tool for analyzing the quality of Si–SiO2 interfaces
Keywords: جریان تاریک; Wet cleaning; STI interface; Image sensor; Dark current
Design and analysis of high sensitivity photosensor using Cylindrical Surrounding Gate MOSFET for low power applications
Keywords: جریان تاریک; ATLAS-3D; Dark current; CSG MOSFET; Photosensor; Quantum efficiency; Responsivity;
Development of S-band photocathode RF guns at Tsinghua University
Keywords: جریان تاریک; Photocathode RF gun; Emittance; Dark current; Quantum efficiency;
Roles of blocking layer and anode bias in processes of impurity-band transition and transport for GaAs-based blocked-impurity-band detectors
Keywords: جریان تاریک; Blocked-impurity-band (BIB); Blocking layer; Absorbing layer; Anode bias; Dark current; Responsivity; Electric field;
Preparation of iodine-free ionic liquid gel electrolyte using polyethylene oxide (PEO)-polyethylene glycol (PEG) and its application in Ti-foil-based dye-sensitized solar cells
Keywords: جریان تاریک; Iodine-free gel electrolyte; Ti foil; Quasi-solid-state dye-sensitized solar cell; Dark current; Electron lifetime;
Anneal treatment to improve the performance of extended wavelength In0.83Ga0.17As photodetectors
Keywords: جریان تاریک; Extended wavelength; InGaAs; Dark current; Annealing treatment; EBIC;
Effect of proton irradiation on extended wavelength In0.83Ga0.17As infrared detector
Keywords: جریان تاریک; InGaAs; Proton irradiation; Dark current; Low frequency noise;
Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As
Keywords: جریان تاریک; Interface state; InGaAs; Passivation; ICPCVD; Dark current;
Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p–n junction
Keywords: جریان تاریک; InAs/GaSb superlattice; Photodiode; Dark current; Midwave infrared
Effect of high dose γ-ray irradiation on GaAs p-i-n photodetectors
Keywords: جریان تاریک; GaAs p-i-n diode; Gamma-ray irradiation; Dark current; Photo response and PL;
Electrically tunable spectral responsivity in metal–semiconductor–metal photodetectors based on low-dimensional ZnCdS/ZnMgS/GaP, ZnCdS/ZnS/GaP heterostructures
Keywords: جریان تاریک; Metal–semiconductor–metal (MSM) diode; Heterostructure; Dark current; Spectral response
InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1 = 5.2 μm, 300 K) operating in the 77-353 Рtemperature range
Keywords: جریان تاریک; Mid-IR detectors; InAsSb photodiodes; Infrared sensors; Dark current; Backside illuminated immersion photodiodes;
Radiation damage of the PCO Pixelfly VGA CCD camera of the BES system on KSTAR tokamak
Keywords: جریان تاریک; KSTAR; Radiation damage; Dark current; CCD; MCNP; MCAM;