کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8146969 | 1524115 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
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چکیده انگلیسی
Au/silicon nitride/In0.82Al0.18As metal insulating semiconductor (MIS) capacitors were fabricated and then investigated by capacitance voltage (C-V) test at variable frequencies and temperatures. Two different technologies silicon nitride (SiNx) films deposited by inductively coupled plasma chemical vapor deposition (“ICPCVD”) and plasma enhanced chemical vapor deposition (“PECVD”) were applied to the MIS capacitors. Fixed charges (Nf), fast (Dit) and slow (Nsi) interface states were calculated and analyzed for the different films deposition MIS capacitors. The Dit was calculated to be 4.16 Ã 1013 cmâ2 eVâ1 for “ICPCVD” SiNx MIS capacitors, which was almost the same to that of “PECVD” SiNx MIS capacitors. The Dit value is obviously higher for the extended wavelength InxGa1âxAs (x > 0.53) epitaxial material as a result of lattice mismatch with substrate. Compared to the results of “PECVD” SiNx MIS capacitors, the Nsi was significantly lower and the Nf was slightly lower for “ICPCVD” SiNx MIS capacitors. X-ray photoelectron spectroscopy (XPS) analysis shows good quality of the “ICPCVD” grown SiNx. The low temperature deposited SiNx films grown by “ICPCVD” show better effect on decreasing the dark current of InxGa1âxAs photodiodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 71, July 2015, Pages 384-388
Journal: Infrared Physics & Technology - Volume 71, July 2015, Pages 384-388
نویسندگان
Ming Shi, Hengjing Tang, Xiumei Shao, Xing Huang, Gaoqi Cao, Rui Wang, Tao Li, Xue Li, Haimei Gong,