کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8146969 1524115 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As
چکیده انگلیسی
Au/silicon nitride/In0.82Al0.18As metal insulating semiconductor (MIS) capacitors were fabricated and then investigated by capacitance voltage (C-V) test at variable frequencies and temperatures. Two different technologies silicon nitride (SiNx) films deposited by inductively coupled plasma chemical vapor deposition (“ICPCVD”) and plasma enhanced chemical vapor deposition (“PECVD”) were applied to the MIS capacitors. Fixed charges (Nf), fast (Dit) and slow (Nsi) interface states were calculated and analyzed for the different films deposition MIS capacitors. The Dit was calculated to be 4.16 × 1013 cm−2 eV−1 for “ICPCVD” SiNx MIS capacitors, which was almost the same to that of “PECVD” SiNx MIS capacitors. The Dit value is obviously higher for the extended wavelength InxGa1−xAs (x > 0.53) epitaxial material as a result of lattice mismatch with substrate. Compared to the results of “PECVD” SiNx MIS capacitors, the Nsi was significantly lower and the Nf was slightly lower for “ICPCVD” SiNx MIS capacitors. X-ray photoelectron spectroscopy (XPS) analysis shows good quality of the “ICPCVD” grown SiNx. The low temperature deposited SiNx films grown by “ICPCVD” show better effect on decreasing the dark current of InxGa1−xAs photodiodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 71, July 2015, Pages 384-388
نویسندگان
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