Keywords: وضعیت رابط; Organic semiconductor; Phthalocyanine; Interface state; PES;
مقالات ISI وضعیت رابط (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Orbital rearrangement mechanism and half-metallicity transition in strained Fe3O4/BaTiO3 interfaces
Keywords: وضعیت رابط; Fe3O4; BaTiO3; Interface state; Biaxial strain; Orbital rearrangement; Half-metallicity;
Investigation of the light soaking behaviors in two-step sputter and selenization Cu(In,Ga)(Se,S)2 solar cells with different sulfur ratios
Keywords: وضعیت رابط; Cu(In,Ga)(Se,S)2 solar cells; Light soaking effect; Interface state; Chalcopyrite thin film solar cells;
Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As
Keywords: وضعیت رابط; Interface state; InGaAs; Passivation; ICPCVD; Dark current;
Effects of post-annealing on the passivation interface characteristics of AlGaN/GaN high electron mobility transistors
Keywords: وضعیت رابط; AlGaN/GaN HEMT; Post-annealing; Spin-on-dielectric; Silicon nitride; Passivation; Interface state
Modified gap states in Fe/MgO/SrTiO3 interfaces studied with scanning tunneling microscopy
Keywords: وضعیت رابط; MgO; SrTiO3; Interface state; STM; STS
The effects of high-energy uranium ion irradiation on Au/n-GaN Schottky diodes
Keywords: وضعیت رابط; Au/GaN Schottky contact; Swift heavy ions; I–V; C–V; Interface state
Interface state and energy level alignment of F4-TCNQ sandwiched between a pentacene film and the ethylene-terminated Si(1Â 0Â 0) surface
Keywords: وضعیت رابط; Organic semiconductor; Charge transfer; Energy level alignment; Interface state;
Charge-controlled fixation of DNA molecules on silicon surface and electro-physical properties of Au-DNA-Si interface
Keywords: وضعیت رابط; DNA fixation; Silicon surface; Interface state; Schottky diode; Admittance;
Effects of mechanical-bending and process-induced stresses on metal effective work function
Keywords: وضعیت رابط; MOSFETs; Effective work function; Stress; Wafer bending; Interface state; Charge pumping
The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy
Keywords: وضعیت رابط; Interface state; Capacitance; Schottky diode; MIS diode; Heterojunction diode; Admittance spectroscopy
Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide
Keywords: وضعیت رابط; GaN; MOSHFET; Al2O3; HfO2; Interface state
Frequency dependence studies on the interface trap density and series resistance of HfO2 gate dielectric deposited on Si substrate: Before and after 50 MeV Li3+ ions irradiation
Keywords: وضعیت رابط; Ion radiation; MOS; HfO2; Series resistance; Interface state; C–V; G–V
Unusual photocapacitance properties of a mono-crystalline silicon solar cell for optoelectronic applications
Keywords: وضعیت رابط; Mono-crystalline silicon solar cell; Capacitance–frequency characteristics; Modified Goswami and Goswami model; Interface state; Photocapacitive and photoresistive sensor
Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications
Keywords: وضعیت رابط; P-ZnTe/n-CdMnTe/GaAs; Magnetic diode; Capacitance-frequency characteristics; Interface state; Relaxation time; Light sensitive capacitor;
Time-dependent degradation due to negative bias temperature instability of p-MOSFET with an ultra-thin SiON gate dielectric
Keywords: وضعیت رابط; Reliability of MOSFET; Oxynitride gate dielectric; Negative bias temperature instability; Interface state; Threshold voltage
Epitaxial growth of anthracene single crystals on graphite (0Â 0Â 0Â 1) substrate with physical vapor growth technique
Keywords: وضعیت رابط; Epitaxy; Growth; Interface state; Surface structure; Morphology; Roughness and topography; Graphite; Aromatics; Stepped single crystal surfaces; Metal-semiconductor interfaces;
HRTEM observation of interface states between ZnO epitaxial film and Si(1Â 1Â 1) substrate
Keywords: وضعیت رابط; 68.55.âa; 78.55.Et; 78.55.âm; ZnO; ZnS; Si; Thin film; Epitaxial growth; Annealing; Interface state; Exciton; Photoluminescence;