کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1785908 | 1023399 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modified gap states in Fe/MgO/SrTiO3 interfaces studied with scanning tunneling microscopy
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Modified gap states in Fe/MgO/SrTiO3 interfaces studied with scanning tunneling microscopy Modified gap states in Fe/MgO/SrTiO3 interfaces studied with scanning tunneling microscopy](/preview/png/1785908.png)
چکیده انگلیسی
The geometric and electronic structures of Fe islands on MgO film layers were studied with scanning tunneling microscopy and spectroscopy. The MgO layers were grown on a Nb-doped single crystal SrTiO3 (100) surface. Deposited Fe atoms aggregate into islands, the height and diameter of which are about 2.5 and 9.4 nm respectively. Fe islands modify the electronic structure of MgO surface; a ring type depression in the scanning tunneling microscope topography appears by lowered local electron density of states around Fe islands. We find that adsorbed Fe atoms reduce the gap states of MgO layers around Fe islands, which is attributed to the reason for the depletion of the electronic density of states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 14, Issue 12, December 2014, Pages 1692–1695
Journal: Current Applied Physics - Volume 14, Issue 12, December 2014, Pages 1692–1695
نویسندگان
Hyung-Joon Shin, Seong Heon Kim, Heejun Yang, Young Kuk,