کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7940850 | 1513197 | 2017 | 36 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Design of InAs/GaSb superlattice infrared barrier detectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Design of InAs/GaSb type-II superlattice (T2SL) infrared barrier detectors is theoretically investigated. Each part of the barrier structures is studied in order to achieve optimal device operation at 150 K and 77 K, in the midwave and longwave infrared domain, respectively. Whatever the spectral domain, nBp structure with a p-type absorbing zone and an n-type contact layer is found to be the most favourable detector architecture allowing a reduction of the dark-current associated with generation-recombination processes. The nBp structures are then compared to pin photodiodes. The MWIR nBp detector with 5 μm cut-off wavelength can operate up to 120 K, resulting in an improvement of 20 K on the operating temperature compared to the pin device. The dark-current density of the LWIR nBp device at 77 K is expected to be as low as 3.5 Ã 10â4 A/cm2 at 50 mV reverse bias, more than one decade lower than the usual T2SL photodiode. This result, for a device having cut-off wavelength at 12 μm, is at the state of the art compared to the well-known MCT 'rule 07'.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 104, April 2017, Pages 402-414
Journal: Superlattices and Microstructures - Volume 104, April 2017, Pages 402-414
نویسندگان
M. Delmas, R. Rossignol, J.B. Rodriguez, P. Christol,