کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8146117 | 1524097 | 2018 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In0.83Ga0.17As photodetectors with different doping concentrations in the absorption layers
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
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چکیده انگلیسی
The performances of wavelength-extended In0.83Ga0.17As PIN photodetectors with 8â¯Ãâ¯1015 or 4â¯Ãâ¯1016â¯cmâ3 doped absorption layers were investigated and compared at different temperatures and bias voltages. Results displayed that they showed comparable device performance around room temperature and low bias voltages, but relatively large difference at lower temperatures and higher bias voltages. At lower operation temperatures the In0.83Ga0.17As photodetectors with 8â¯Ãâ¯1015â¯cmâ3 doped absorption layers showed smaller dark currents and higher resistance area products R0A than those with 4â¯Ãâ¯1016â¯cmâ3 doped absorption layers. It was ascribed to the reduced trap-assisted tunneling dark current in the photodetector with the lower doped In0.83Ga0.17As absorber layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 89, March 2018, Pages 381-386
Journal: Infrared Physics & Technology - Volume 89, March 2018, Pages 381-386
نویسندگان
X.Y. Chen, Y. Gu, Y.G. Zhang, Y.J. Ma, B. Du, H.Y. Shi, W.Y. Ji, Y. Zhu,