Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes

P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure photodiodes with linear impurity distribution in the space charge region have been fabricated and studied. The photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8·10−6 A/cm2, Vbias = −0.5 V, 164 K) and background limited infrared photodetector (BLIP) regime starting from 150 K (2π field of view, D3.1μm∗ = 1.4·1012 cm Hz1/2/W) have been demonstrated.