The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions

• The temperature dependences of the reverse current of CdxHg1−xTe of “p-on-n” and “n-on-p” junctions are presented.
• Experimental data have shown close agreement with theory.
• Parameters of deep levels were estimated.

We investigated the temperature dependences of reverse current of “p-on-n” and “n-on-p” junctions fabricated in Cd0.39Hg0.61Te and Cd0.38Hg0.62 heterostuctures grown by MBE on Si substrates. The experimental data of reverse current through “p-on-n” junction in Arrhenius coordinates described by the diffusion of charge carriers in temperature range 210–330 K and carrier generation through the deep level located in the middle of the band gap in temperature range of 138–210 K. The experimental data of reverse current through “n-on-p” junction in Arrhenius coordinates described by diffusion of charge carriers in temperature range 170–300 K and carrier generation through the deep level located in the middle of the band gap in temperature range 130–170 K, At temperature range 77–130 K reverse current through “n-on-p” junction was constant and depended on bias voltage.