Numerical modeling of an InAsSb/InAsSbP double heterojunction light emitting diode for mid-infrared (2–5 μm) applications

The numerical model of a Mid-infrared (MIR) P+–InAs0.48Sb0.22P0.30/n0–InAs0.89Sb0.11/N−–InAs0.48Sb0.22P0.30 double heterostructure light emitting diode (DH-LED) has been reported in this paper. The governing equation of the structure has been solved numerically under the condition of high injection using fourth order Runge-Kutta method employing the shooting algorithm. The numerical model takes into account all dominant radiative and non-radiative recombination processes, surface recombination velocity and self-absorption in the active layer of DH-LED. The DH-LED has been simulated for mid-infrared applications by considering modulation bandwidth and its dependence on active layer width, doping concentration, and injected carrier density. The effect of surface recombination velocity on the quantum efficiency, peak light intensity for different values of active layer width and doping concentration has been estimated numerically. The rise time of the structure has been evaluated by considering transient response for a step current of 50 mA. The output power of DH-LED has been computed as a function of bias current and compared/ contrasted with the reported analytical and experimental results.