Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes

Double heterostructure (DH) photodiodes (PDs) with InAs active layer and back-side illumination have been studied in the 100-300 K temperature range. Temperature dependence of a spectral response was standard for InAs based PDs while saturation current (or zero bias resistance) was characterized by a single value of the activation energy with domination of a diffusion current at most temperatures. As a result the simulated detectivity value was beyond the known numbers for homo- and heterojunction InAs PDs.