کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1784873 | 1023281 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bias dependence of photo-response in HgCdTe photodiodes due to series resistance
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Bias dependence of photo-response in HgCdTe photodiodes due to series resistance Bias dependence of photo-response in HgCdTe photodiodes due to series resistance](/preview/png/1784873.png)
چکیده انگلیسی
In this paper, we present the experimental results of photo-response measurements performed on Hg0.7Cd0.3Te photodiodes and report the dependence of measured quantum efficiency on the applied bias. Because of non-zero series resistance of a photodiode, the apparent photo-response may lower down at near zero bias region of operation or near the bias of peak dynamic resistance, which is the preferred bias. By increasing the reverse bias we may compensate this reduction but only up to a certain reverse voltage. Beyond this limit, the dynamic resistance of the photodiode reduces due to tunneling current, resulting in the reduction in apparent photo-response. Due to this behavior a peak appears in the measured quantum efficiency when plotted against the applied reverse bias voltage in contrast to the view that quantum efficiency is independent of bias.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 54, Issue 2, March 2011, Pages 108-113
Journal: Infrared Physics & Technology - Volume 54, Issue 2, March 2011, Pages 108-113
نویسندگان
Raghvendra Sahai Saxena, R.K. Bhan, Lalita Sareen, R. Pal, R.K. Sharma, R. Muralidharan,