کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1784899 1524131 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation
چکیده انگلیسی

We report on effective sulfur-based passivation treatments of type-II InAs/GaSb strained layer superlattice detectors (100% cut-off wavelength is 9.8 μm at 77 K). The electrical behavior of detectors passivated by electrochemical sulfur deposition (ECP) and thioacetamide (TAM) was evaluated for devices of various sizes. ECP passivated detectors with a perimeter-to-area ratio of 1600 cm−1 exhibited superior performance with surface resistivity in excess of 104 Ω cm, dark current density of 2.7 × 10−3 A/cm2, and specific detectivity improved by a factor of 5 compared to unpassivated devices (VBias =  − 0.1 V, 77 K).


► Sulfur is effective passivant for InAs/GaSb strained-layer superlattice detectors.
► Variable area diode array method was employed to test the passivation efficacy.
► Electrochemically deposited sulfur significantly improves detector performance.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 55, Issues 2–3, March 2012, Pages 216–219
نویسندگان
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