Dark current analysis of InAs/GaSb superlattices at low temperatures

A limitation to the advancement of the strained-layer superlattice technology for infrared detection is unwanted high dark currents and low R0A values, especially at long-wavelengths. In this paper, we discuss dark current characteristics of LWIR InAs/GaSb type-II superlattice detectors. Comparing devices with different dominant mechanisms, a more thorough analysis at low temperatures is provided.