کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1785210 1023306 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy
چکیده انگلیسی

In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 51, Issue 2, October 2007, Pages 131–135
نویسندگان
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